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ESMT
PSRAM
Features
Advanced low-power architecture * High speed: 55 ns, 70 ns * Wide voltage range: 2.7V to 3.6V * Typical active current: 1 mA @ f = 1 MHz * Low standby power * Automatic power-down when deselected
M24L216128DA 2-Mbit (128K x 16) Pseudo Static RAM
Functional Description
The M24L216128DA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 128K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for portable applications such as cellular telephones. The device can be put into standby mode, reducing power consumption dramatically when deselected ( CE1 HIGH, CE2 LOW or both BHE and BLE are HIGH). The input/output pins(I/O0 through I/O15) are placed in a high-impedance state when the chip is deselected ( CE1 HIGH, CE2 LOW) or OE is deasserted HIGH), or during a write operation (Chip Enabled and Write Enable WE LOW). Reading from the device is accomplished by asserting the Chip Enables ( CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing the Write Enable ( WE ) HIGH. If Byte Low Enable ( BLE ) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable ( BHE ) is LOW, then data from memory will appear on I/O8 to I/O15. Seethe Truth Table for a complete description of read and write modes.
Logic Block Diagram
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008 Revision : 1.2 1/14
ESMT
Pin Configuration[2, 3, 4] 48-ball VFBGA Top View
M24L216128DA
44-pin TSOPII Top View
A4 A3 A2 A1 A0 CE1 I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE BHE BL E I/O 1 5 I/O 1 4 I/O 1 3 I/O 1 2 VSS VCC I/ O1 1 I/ O1 0 I/ O9 I/ O8 CE2 A8 A9 A1 0 A11 NC
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008 Revision : 1.2 2/14
ESMT
Product Portfolio Product
Product Min. M24L216128DA 2.7 VCC Range (V) Speed(ns) Max 3.6 55 70 Operating ICC(mA) f = 1MHz Typ.[5] 1 Max. 5 f = fMAX Typ.[5] 14 8
M24L216128DA
Power Dissipation Standby ISB2(A) Typ. [5] 9 Max. 40
Typ. 3.0
Max. 22 15
Note: 2. Ball D3, H1, G2, H6 are the address expansion pins for the 4-Mb, 8-Mb, 16-Mb, and 32-Mb densities respectively. 3. NC "no connect"--not connected internally to the die. 4. DNU (Do Not Use) pins have to be left floating or tied to VSS to ensure proper application. 5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC (typ) and TA = 25 C .
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008 Revision : 1.2 3/14
ESMT
Maximum Ratings
(Above which the useful life may be impaired. For user guide-lines, not tested.) Storage Temperature ...................................-65C to +150C Ambient Temperature with Power Applied ..............................................-55C to +125C Supply Voltage to Ground Potential . .................-0.4V to 4.6V DC Voltage Applied to Outputs in High-Z State[6, 7, 8] .......................................-0.4V to 3.7V DC Input Voltage[6, 7, 8] ....................................-0.4V to 3.7V Output Current into Outputs (LOW) ...............................20 mA
M24L216128DA
Static Discharge Voltage ........................................ >2001V (per MIL-STD-883, Method 3015) Latch-up Current ....................................................> 200 mA
Operating Range
Range Extended Industrial Ambient Temperature (TA) -25C to +85C -40C to +85C VCC 2.7V to 3.6V 2.7V to 3.6V
DC Electrical Characteristics (Over the Operating Range)
-55 Parameter VCC VOH VOL VIH VIL IIX IOZ ICC Description Supply Voltage Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Current Output Leakage Current VCC Operating Supply Current Automatic CE1 Power-Down Current --CMOS Inputs Automatic CE1 Power-Down Current --CMOS Inputs Test Conditions Min. IOH = -0.1 mA IOL = 0.1 mA 0.8* VCC -0.4 -1 -1 14 1 2.7 VCC0.4 Typ .[5] 3.0 Max. 3.6 Min. 2.7 VCC0.4 0.8* VCC -0.4 -1 -1 8 1 -70 Typ. [5] 3.0 Unit Max. 3.6 V V 0.4 VCC+0 .4V 0.4 +1 +1 15 5 mA V V V A A
0.4 VCC+ 0.4V 0.4 +1 +1 22 5
f=0 GND VIN VCC GND VOUT VCC, Output Disabled f = fMAX = 1/tRC f = 1 MHz VCC = 3.6V IOUT = 0mA CMOS levels
ISB1
CE1 VCC - 0.2V, CE2 0.2V, VIN VCC - 0.2V, VIN 0.2V, f = fMAX (Address and Data Only), f = 0 ( OE ,
WE , BHE and BLE ), VCC=3.6V
40
250
40
250
A
ISB2
CE1 VCC-0.2V, CE2 0.2V VIN VCC - 0.2V or VIN 0.2V, f = 0, VCC =3.6V
9
40
9
40
A
Capacitance[9]
Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25C, f = 1 MHz VCC = VCC(typ) Max. 8 8 Unit pF pF
Thermal Resistance[9]
Parameter JA Description Thermal Resistance(Junction to Ambient) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/ JESD51. BGA 55 17 Unit C/W C/W
JC Thermal Resistance (Junction to Case) Notes: 6.VIH(MAX) = VCC + 0.5V for pulse durations less than 20 ns. 7.VIL(MIN) = -0.5V for pulse durations less than 20 ns. 8.Overshoot and undershoot specifications are characterized and are not 100% tested. 9.Tested initially and after any design or process changes that may affect these parameters.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008 Revision : 1.2 4/14
ESMT
AC Test Loads and Waveforms
M24L216128DA
Parameters R1 R2 RTH VTH
3.0V VCC 22000 22000 11000 1.50
Unit V
Switching Characteristics Over the Operating Range[10]
Parameter Read Cycle tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tDBE tLZBE tHZBE tSK[14] Write Cycle[12] tWC tSCE tAW tHA tSA Description Read Cycle Time Address to Data Valid Data Hold from Address Change CE1 LOW and CE2 HIGH to Data Valid OE LOW to Data Valid OE LOW to LOW Z[11, 12] OE HIGH to High Z[11, 12] CE1 LOW and CE2 HIGH to Low Z[11, 12] CE1 HIGH and CE2 LOW to High Z[11, 12]
BLE / BHE LOW to Data Valid BLE / BHE LOW to Low Z[11, 12] BLE / BHE HIGH to High Z[11, 12] Address Skew
-55 [14] Min. Max. 55[14] 55 5 55 25 5 25 2 25 55 5 10 0 55 45 45 0 0
-70 Min. 70 70 10 70 35 5 25 5 25 70 5 25 10 70 55 55 0 0 Max.
Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Write Cycle Time CE1 LOW and CE2 HIGH to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start
Notes: 10. Test conditions assume signal transition time of 1 V/ns or higher, timing reference levels of VCC(typ)/2, input pulse levels of 0V to VCC(typ), and output loading of the specified IOL/IOH and 30-pF load capacitance. 11. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state. 12. High-Z and Low-Z parameters are characterized and are not 100% tested. 13. The internal write time of the memory is defined by the overlap of WE , CE1 = VIL, CE2 = VIH, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates write. 14. To achieve 55-ns performance, the read access should be Chip-enable controlled. In this case tACE is the critical parameter and tSK is satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stable within 10 ns after the start of the read cycle.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008 Revision : 1.2 5/14
ESMT
Switching Characteristics Over the Operating Range (continued)[10]
Parameter tPWE tBW tSD tHD tHZWE tLZWE Description
WE Pluse Width BLE / BHE LOW to Write End
M24L216128DA
-55 Min. 40 50 25 0 25 5 5 Max. Min. 55 55 25 0
-70 Max.
Unit ns ns ns ns 25 ns ns
Data Set-Up to Write End Data Hold from Write End
WE LOW to High-Z[11, 12] WE HIGH to Low-Z[11, 12]
Switching Waveforms Read Cycle 1 (Address Transition Controlled)[14, 15, 16]
Read Cycle 2 ( OE Controlled)[14, 16]
Notes: 15. Device is continuously selected. OE , CE1 = VIL and CE2 = VIH. 16. WE is HIGH for Read Cycle.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008 Revision : 1.2 6/14
ESMT
Switching Waveforms (continued) Write Cycle 1 ( WE Controlled)[13, 14, 17, 18, 19]
M24L216128DA
Write Cycle 2 ( CE1 or CE2 Controlled)[13, 14, 17, 18, 19]
Notes: 17.Data I/O is high impedance if OE VIH. 18.If Chip Enable goes INACTIVE with WE = HIGH, the output remains in a high-impedance state. 19.During the DON'T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied. Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008 Revision : 1.2 7/14
ESMT
Switching Waveforms (continued) Write Cycle 3 ( WE Controlled, OE LOW)[18, 19]
M24L216128DA
Write Cycle 4 ( BHE / BLE Controlled, OE LOW)[18, 19]
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008 Revision : 1.2 8/14
ESMT
Avoid Timing
M24L216128DA
ESMT Pseudo SRAM has a timing which is not supported at read operation, If your system has multiple invalid address signal shorter than tRC during over 15s at read operation shown as in Abnormal Timing, it requires a normal read timing at leat during 15s shown as in Avoidable timing 1 or toggle CE1 to high (tRC) one time at least shown as in Avoidable Timing 2.
Abnormal Timing
15s
CE1
WE tRC
Address
Avoidable Timing 1
15s
CE1
WE tRC
Address
Avoidable Timing 2
15s
CE1 tRC
WE tRC
Address
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008 Revision : 1.2 9/14
ESMT
Truth Table[20]
CE1 H X X L L L L L L L L L CE2 X L X H H H H H H H H H
WE X X X
M24L216128DA
OE X X X L L L H H H X X X
BHE X X H
BLE X X H
Inputs/Outputs High Z High Z High Z Data Out (I/O0-I/O15) Data Out (I/O0-I/O7); (I/O8-I/O15) in High Z Data Out (I/O8-I/O15); (I/O0-I/O7) in High Z High Z High Z High Z Data In (I/O0-I/O15) Data In (I/O0-I/O7); (I/O8-I/O15) in High Z Data Out (I/O8-I/O15); (I/O0-I/O7) in High Z
Mode Deselect/Power-Down Deselect/Power-Down Deselect/Power-Down Read Read Read Output Disabled Output Disabled Output Disabled Write (Upper Byte and Lower Byte) Write (Lower Byte Only) Write (Upper Byte Only)
Power Standby (ISB) Standby (ISB) Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC)
H H H H H H L L L
L H L L H L L H L
L L H L L H L L H
Ordering Information
Speed (ns) 55 70 55 70 55 70 55 70 Ordering Code M24L216128DA-55BEG M24L216128DA -70BEG M24L216128DA-55TEG M24L216128DA-70TEG M24L216128DA-55BIG M24L216128DA -70BIG M24L216128DA-55TIG M24L216128DA-70TIG Package Type 48-ball Very Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free) 48-ball Very Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free) 44-pin TSOPII (Pb-Free) 44-pin TSOPII (Pb-Free) 48-ball Very Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free) 48-ball Very Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free) 44-pin TSOPII (Pb-Free) 44-pin TSOPII (Pb-Free) Operating Range Extended Extended Extended Extended Industrial Industrial Industrial Industrial
Note: 20.H = Logic HIGH, L = Logic LOW, X = Don't Care.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008 Revision : 1.2 10/14
ESMT
Package Diagrams
M24L216128DA
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008 Revision : 1.2 11/14
ESMT
44-LEAD TSOP(II) PSRAM(400mil)
M24L216128DA
Symbol Min A A1 A2 B B1 C C1 D ZD E E1 L L1 e 11.56 10.03 0.40 0.05 0.95 0.30 0.30 0.12 0.10 18.28
Dimension in mm Norm Max 1.20 0.15 1.00 1.05 0.45 0.35 0.40 0.21 0.16 18.41 0.805 REF 11.96 10.29 0.69 0.455 0.395 0.016 18.54 0.002 0.037 0.012 0.012 0.005 0.004 0.720 Min
Dimension in inch Norm Max 0.047 0.006 0.039 0.042 0.018 0.014 0.016 0.008 0.006 0.725 0.0317 REF 0.463 0.400 0.023 0.031 REF 0.471 0.4 0.027 0.730
11.76 10.16 0.59 0.80 REF 0.80 BSC
0.0315 BSC
0
8
0
8
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008 Revision : 1.2 12/14
ESMT
Revision History
Revision 1.0 Date 2007.07.06 2008.02.27 Original Description
M24L216128DA
1.1
1. Add 44-pin TSOPII package 2. Add Avoid timing 3. Modify type error of function description (standby mode : CE1 LOW, CE2 HIGH => CE1 HIGH, CE2 LOW) 1. Move Revision History to the last 2. Modify voltage range 2.7V~3.3V to 2.7V~3.6V 3. Add Industrial grade
1.2
2008.07.04
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008 Revision : 1.2 13/14
ESMT
Important Notice All rights reserved.
M24L216128DA
No part of this document may be reproduced or duplicated in any form or by any means without the prior permission of ESMT. The contents contained in this document are believed to be accurate at the time of publication. ESMT assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. The information contained herein is presented only as a guide or examples for the application of our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. No license, either express , implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of ESMT or others. Any semiconductor devices may have inherently a certain rate of failure. To minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. ESMT's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008 Revision : 1.2 14/14

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